 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| S6A13 TOSHIBA Thyristor Silicon Planar Type S6A13 Condenser Discharge Control Applications * * * * * FWD included between cathode and anode Critical rate of rise of ON-state current: di/dt = 750 A/s Repetitive peak surge ON-state current: ITRM = 500 A (tw = 2 s) Repetitive peak OFF-state voltage: VDRM = 800 V Gate trigger current: IGT = 30 mA max. Maximum Ratings Characteristics Repetitive peak OFF-state voltage Repetitive peak surge ON-state current (Note) Repetitive peak surge forward current (Note) Critical rate of rise of ON-state current (Note) Peak gate power dissipation Average gate power dissipation Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Junction temperature Storage temperature range PGM PG (AV) VFGM VRGM IGM Tj Tstg 5 0.5 10 -5 2 -40~125 -40~150 W W V V A C C Symbol VDRM ITRM IFRM Rating 800 500 Unit V A 500 A di/dt 750 A/s Note: VD < 0.8 x rated, Tc = 85C, igp > 60 mA, tgw > 10 s, tgr < 150 ns = = = = Marking 1 2 1 MARK S6A13 TYPE NAME S6A13 2 Lot Number Month (starting from alphabet A) Year (last decimal digit of the current year) 961001EAA1 * TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 2000-04-14 1/3 S6A13 Electrical Characteristics (Ta = 25C) Characteristics Repetitive peak OFF-state current Peak ON-state voltage (thyristor) Peak forward voltage (diode) Gate trigger voltage Gate trigger current Gate non-trigger voltage Critical rate of rise of OFF-state voltage Holding current Thermal resistance (junction to ambient) Symbol IDRM VTM VFM VGT IGT VGD dv/dt IH Rth (j-a) Test Condition VDRM = Rated ITM = 25 A IFM = 25 A VD = 6 V, RL = 10 VD = Rated, Tc = 125C VDRM = Rated, Tc = 125C Exponential Rise VD = 6 V, ITM = 1 A DC Min 0.2 Typ. 50 Max 10 1.5 2.0 1.0 30 35 70 Unit A V V V mA V V/s mA C/W Test Circuit Examples R L S6A13 VD C tw = LC , IP = VD L/C 0.5 IP IP t tw = 2 s di/dt = 0.5 IP t Equivalent Circuit ANODE GATE CATHODE 2000-04-14 2/3 S6A13 IGT (Tc)/IGT (Tc = 25C) - Tc 2.5 (typical) 2.0 VD = 6 V RL = 10 VGT (Tc)/VGT (Tc = 25C) - Tc (typical) VD = 6 V RL = 10 2.0 VGT (Tc)/VGT (Tc = 25C) IGT (Tc)/IGT (Tc = 25C) 1.5 1.5 1.0 1.0 0.5 0.5 0.0 -60 -20 20 60 100 140 0.0 -60 -20 20 60 100 140 Case temperature Tc (C) Case temperature Tc (C) IH (Tc)/IH (Tc = 25C) - Tc 2.5 (typical) 5 VD = 6 V ITM = 1 A Pulse trigger characteristics VD = 6 V RL = 10 Tc = 25C (typical) Resistance load 2.0 4 IH (Tc)/IH (Tc = 25C) Rectangular waveform 1.5 iGT(tw)/IGT 3 tw 2 iGT 1.0 0.5 1 0.0 -60 -20 20 60 100 140 0 0.1 1 10 100 Case temperature Tc (C) Gate trigger pulse width tw (s) iT - vT (thyristor) 1000 1000 iF - vF (diode) Instantaneous forward current iF (A) Instantaneous ON-state current iT (A) 100 100 10 10 Tj = 125C 25C Tj = 125C 1 0.0 25C 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 1.0 2.0 3.0 4.0 5.0 6.0 Instantaneous ON-state voltage vT (V) Instantaneous forward voltage vF (V) 2000-04-14 3/3 |
Price & Availability of S6A13
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |